RF Plasma Generator, 600 W, 13.56 MHz, DeviceNet & Analog, Half Rack_1662325
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MKS RF Plasma Generator, 600 W, 13.56 MHz, DeviceNet & Analog, Half Rack

The MKS RF Plasma Generator delivers 600 Watts of power at 13.56 MHz in a compact, air-cooled half rack housing. Equipped with DeviceNet, 25-pin analog, and RS232 interfaces, this plasma generator features advanced technology for superior performance and reliability in demanding industrial applications.

Product Features

  • 600 Watts power output at 13.56 MHz frequency for consistent plasma generation
  • Compact air-cooled half rack design for efficient space utilization
  • DeviceNet, 25-pin analog, and RS232 communication interfaces for versatile control options
  • High-speed closed loop control system for precise power regulation
  • Class E RF deck and switching modulator ensure superior output performance
  • Single printed circuit board assembly reduces internal wiring, enhancing reliability
  • Suitable for continuous operation or stand-alone batch tools
  • Ideal for Solar, LED, MEMs, and semiconductor manufacturing applications

Benefits

  • Reliable and stable plasma power output ensures consistent process quality
  • Compact half rack design saves valuable lab or production space
  • Multiple communication interfaces provide flexible integration with control systems
  • Reduced internal wiring minimizes potential points of failure and simplifies maintenance
  • High-speed closed loop control adapts quickly to process variations for optimal performance
  • Air-cooled design eliminates the need for additional cooling infrastructure, reducing operating costs

Why Choose the MKS RF Plasma Generator?

This RF plasma generator combines advanced control technology with a compact and reliable design, making it ideal for high-demand environments such as semiconductor fabrication, solar cell production, and LED manufacturing. Its robust construction and versatile interfaces ensure seamless integration and long-term dependable operation, supporting both continuous and batch plasma processes with precision.

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