The SWC3000 system provide controlled chemical dispensing capabilities, allowing for enhanced particle removal from the specimen surface.

• Designed for the cleaning of single wafers up to 300mm/12″
• Ideal for the cleaning of patterned and un-patterned, Germanium (Ge), Galluim Arsendie (GaAs) and Indium Phosphide (InP) wafers
• Perfect solution for post CMP cleaning, cleaning of diced chips on a wafer frame, cleaning after plasma etch or photoresist stripping, mask blanks or contact mask cleaning and optic lense cleaning

Utilising the chemical dispensing functionality alongside the megasonic cleaning technology allows for highly optomised cleaning. The SWC3000 system is capable of in-situ spin drying with heated N2 or IPA. “Dry-In-Dry-Out” one step processing is possible with the lowest capital investment and cost of ownership. The process time for SWC systems can vary between 3-5 minutes per substrate, depending on the size and cleaning options used.