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Brand: Elionix
Part No: ELS-F125
Availability: TBA

Worlds First 125kV Ultra High Precision Electron Beam Lithography System

The Elionix ELS-F125 EBL system is a unique system that has changed the face of E-Beam Lithography throughout the nano-technology research world.

The ELS-F125 has been the focus of many renowned scientific papers with a growing install base around the world.

Best Pattern Writing Capabilities

  • Line width of 5nm or less is guaranteed at 125kV
  • 1.7nm beam diameter & minimum proximity effect at 125kV

High Throughput Capabilities

  • Superior large field writing – uniform 10nm lines in entire 600um field
  • Small beam diameter at high beam current – 2nm beam diameter at 1nA
  • 100mHz scan speed for unrivalled throughput

User Friendly Interface

  • CAD and SEM interfaces with WIN7 software
  • Easy pattern design function
  • Easy control of beam condition

Compact Footprint

  • Small footprint to free up valuable cleanroom space
Emitter ZrO/W Thermal Field Emitter
Acceleration Voltage 125 / 100 / 75 / 50 / 25kV
Minimum Beam Diameter Dia 1.7nm (125kV)
Beam Current 20pA to 100nA
Lithography Field Size From 3,000um x 3000um (Max @ 25kV) to 500um x 500um (Max 125kV)
Beam Positioning 1,000,000 x 1,000,000 (Max @ 20bit DAC)
Beam Positioning Resolution 0.1nm
Substrate Size (Max) 8" Wafer or 8" Square Mask
OVERVIEW
SPECIFICATIONS
DOWNLOADS
Brand: Elionix
Part No: ELS-F125
Availability: TBA

Worlds First 125kV Ultra High Precision Electron Beam Lithography System

The Elionix ELS-F125 EBL system is a unique system that has changed the face of E-Beam Lithography throughout the nano-technology research world.

The ELS-F125 has been the focus of many renowned scientific papers with a growing install base around the world.

Best Pattern Writing Capabilities

  • Line width of 5nm or less is guaranteed at 125kV
  • 1.7nm beam diameter & minimum proximity effect at 125kV

High Throughput Capabilities

  • Superior large field writing – uniform 10nm lines in entire 600um field
  • Small beam diameter at high beam current – 2nm beam diameter at 1nA
  • 100mHz scan speed for unrivalled throughput

User Friendly Interface

  • CAD and SEM interfaces with WIN7 software
  • Easy pattern design function
  • Easy control of beam condition

Compact Footprint

  • Small footprint to free up valuable cleanroom space
Emitter ZrO/W Thermal Field Emitter
Acceleration Voltage 125 / 100 / 75 / 50 / 25kV
Minimum Beam Diameter Dia 1.7nm (125kV)
Beam Current 20pA to 100nA
Lithography Field Size From 3,000um x 3000um (Max @ 25kV) to 500um x 500um (Max 125kV)
Beam Positioning 1,000,000 x 1,000,000 (Max @ 20bit DAC)
Beam Positioning Resolution 0.1nm
Substrate Size (Max) 8" Wafer or 8" Square Mask

ELS-F125 Electron Beam Lithography System - 125kV

OVERVIEW
SPECIFICATIONS
DOWNLOADS
Brand: Elionix
Part No: ELS-F125
Availability: TBA

Worlds First 125kV Ultra High Precision Electron Beam Lithography System

The Elionix ELS-F125 EBL system is a unique system that has changed the face of E-Beam Lithography throughout the nano-technology research world.

The ELS-F125 has been the focus of many renowned scientific papers with a growing install base around the world.

Best Pattern Writing Capabilities

  • Line width of 5nm or less is guaranteed at 125kV
  • 1.7nm beam diameter & minimum proximity effect at 125kV

High Throughput Capabilities

  • Superior large field writing – uniform 10nm lines in entire 600um field
  • Small beam diameter at high beam current – 2nm beam diameter at 1nA
  • 100mHz scan speed for unrivalled throughput

User Friendly Interface

  • CAD and SEM interfaces with WIN7 software
  • Easy pattern design function
  • Easy control of beam condition

Compact Footprint

  • Small footprint to free up valuable cleanroom space
Emitter ZrO/W Thermal Field Emitter
Acceleration Voltage 125 / 100 / 75 / 50 / 25kV
Minimum Beam Diameter Dia 1.7nm (125kV)
Beam Current 20pA to 100nA
Lithography Field Size From 3,000um x 3000um (Max @ 25kV) to 500um x 500um (Max 125kV)
Beam Positioning 1,000,000 x 1,000,000 (Max @ 20bit DAC)
Beam Positioning Resolution 0.1nm
Substrate Size (Max) 8" Wafer or 8" Square Mask
OVERVIEW
SPECIFICATIONS
DOWNLOADS
Brand: Elionix
Part No: ELS-F125
Availability: TBA

Worlds First 125kV Ultra High Precision Electron Beam Lithography System

The Elionix ELS-F125 EBL system is a unique system that has changed the face of E-Beam Lithography throughout the nano-technology research world.

The ELS-F125 has been the focus of many renowned scientific papers with a growing install base around the world.

Best Pattern Writing Capabilities

  • Line width of 5nm or less is guaranteed at 125kV
  • 1.7nm beam diameter & minimum proximity effect at 125kV

High Throughput Capabilities

  • Superior large field writing – uniform 10nm lines in entire 600um field
  • Small beam diameter at high beam current – 2nm beam diameter at 1nA
  • 100mHz scan speed for unrivalled throughput

User Friendly Interface

  • CAD and SEM interfaces with WIN7 software
  • Easy pattern design function
  • Easy control of beam condition

Compact Footprint

  • Small footprint to free up valuable cleanroom space
Emitter ZrO/W Thermal Field Emitter
Acceleration Voltage 125 / 100 / 75 / 50 / 25kV
Minimum Beam Diameter Dia 1.7nm (125kV)
Beam Current 20pA to 100nA
Lithography Field Size From 3,000um x 3000um (Max @ 25kV) to 500um x 500um (Max 125kV)
Beam Positioning 1,000,000 x 1,000,000 (Max @ 20bit DAC)
Beam Positioning Resolution 0.1nm
Substrate Size (Max) 8" Wafer or 8" Square Mask
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