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OVERVIEW
DOWNLOADS
Brand: Aixtron
Part No: BM2IN
Availability: TBA

AIXTRON’s unique plasma-based deposition technology makes the growth process of Graphene & Carbon Nanotubes very flexible and allows different nanomaterials to be produced. The plasma complements the chemical vapor deposition process and enables almost all variants and shapes of graphene, carbon nanotubes and nanowires to be synthesized, as well as lowering process temperatures and making possible different surface preparations.

Features

  • 2" Diameter substrates - perfect for R&D
  • Fast response heater with maximum temp: 1000 DegC. Ramp rate of 1000 DegC/min
  • Closed loop infrared temperature control
  • Thermal & Plasma Enhanced CVD system
  • Up to 8 gas channels with active pressure control
  • Both substrate and top heater system
  • Wet or dry pumping system
  • Excellent reproducibility

Advanced Design

  • Showerhead technology for excellent uniformity across the substrate
  • Plasma with frequency and duty cycle control
  • Optimized geometry for uniformity
  • High temperature version for epitaxial graphene
  • Gas & Liquid delivery
  • Complex materials & hazardous precursors

Precise Control

  • User friendly interface
  • Automatic process control
  • Easy recipe editing and recipe library
  • Intgrated process camera
  • Remote operation via TCP/IP
  • Fully safety interlocked
  • System management tools and reports

Benefits

  • Flexible processing for different applications
  • Fast growth and turnaround times
  • Low cost of ownership
  • Easy Maintenance and cleaning
  • Multiuser account with access control
  • Real time data logging & consumables tracking
  • Extensive growth library and integration experience
  • Large user and install base
OVERVIEW
DOWNLOADS
Brand: Aixtron
Part No: BM2IN
Availability: TBA

AIXTRON’s unique plasma-based deposition technology makes the growth process of Graphene & Carbon Nanotubes very flexible and allows different nanomaterials to be produced. The plasma complements the chemical vapor deposition process and enables almost all variants and shapes of graphene, carbon nanotubes and nanowires to be synthesized, as well as lowering process temperatures and making possible different surface preparations.

Features

  • 2" Diameter substrates - perfect for R&D
  • Fast response heater with maximum temp: 1000 DegC. Ramp rate of 1000 DegC/min
  • Closed loop infrared temperature control
  • Thermal & Plasma Enhanced CVD system
  • Up to 8 gas channels with active pressure control
  • Both substrate and top heater system
  • Wet or dry pumping system
  • Excellent reproducibility

Advanced Design

  • Showerhead technology for excellent uniformity across the substrate
  • Plasma with frequency and duty cycle control
  • Optimized geometry for uniformity
  • High temperature version for epitaxial graphene
  • Gas & Liquid delivery
  • Complex materials & hazardous precursors

Precise Control

  • User friendly interface
  • Automatic process control
  • Easy recipe editing and recipe library
  • Intgrated process camera
  • Remote operation via TCP/IP
  • Fully safety interlocked
  • System management tools and reports

Benefits

  • Flexible processing for different applications
  • Fast growth and turnaround times
  • Low cost of ownership
  • Easy Maintenance and cleaning
  • Multiuser account with access control
  • Real time data logging & consumables tracking
  • Extensive growth library and integration experience
  • Large user and install base

Graphene & Carbon Nanotube PECVD Deposition System - 2" R&D

OVERVIEW
DOWNLOADS
Brand: Aixtron
Part No: BM2IN
Availability: TBA

AIXTRON’s unique plasma-based deposition technology makes the growth process of Graphene & Carbon Nanotubes very flexible and allows different nanomaterials to be produced. The plasma complements the chemical vapor deposition process and enables almost all variants and shapes of graphene, carbon nanotubes and nanowires to be synthesized, as well as lowering process temperatures and making possible different surface preparations.

Features

  • 2" Diameter substrates - perfect for R&D
  • Fast response heater with maximum temp: 1000 DegC. Ramp rate of 1000 DegC/min
  • Closed loop infrared temperature control
  • Thermal & Plasma Enhanced CVD system
  • Up to 8 gas channels with active pressure control
  • Both substrate and top heater system
  • Wet or dry pumping system
  • Excellent reproducibility

Advanced Design

  • Showerhead technology for excellent uniformity across the substrate
  • Plasma with frequency and duty cycle control
  • Optimized geometry for uniformity
  • High temperature version for epitaxial graphene
  • Gas & Liquid delivery
  • Complex materials & hazardous precursors

Precise Control

  • User friendly interface
  • Automatic process control
  • Easy recipe editing and recipe library
  • Intgrated process camera
  • Remote operation via TCP/IP
  • Fully safety interlocked
  • System management tools and reports

Benefits

  • Flexible processing for different applications
  • Fast growth and turnaround times
  • Low cost of ownership
  • Easy Maintenance and cleaning
  • Multiuser account with access control
  • Real time data logging & consumables tracking
  • Extensive growth library and integration experience
  • Large user and install base
OVERVIEW
DOWNLOADS
Brand: Aixtron
Part No: BM2IN
Availability: TBA

AIXTRON’s unique plasma-based deposition technology makes the growth process of Graphene & Carbon Nanotubes very flexible and allows different nanomaterials to be produced. The plasma complements the chemical vapor deposition process and enables almost all variants and shapes of graphene, carbon nanotubes and nanowires to be synthesized, as well as lowering process temperatures and making possible different surface preparations.

Features

  • 2" Diameter substrates - perfect for R&D
  • Fast response heater with maximum temp: 1000 DegC. Ramp rate of 1000 DegC/min
  • Closed loop infrared temperature control
  • Thermal & Plasma Enhanced CVD system
  • Up to 8 gas channels with active pressure control
  • Both substrate and top heater system
  • Wet or dry pumping system
  • Excellent reproducibility

Advanced Design

  • Showerhead technology for excellent uniformity across the substrate
  • Plasma with frequency and duty cycle control
  • Optimized geometry for uniformity
  • High temperature version for epitaxial graphene
  • Gas & Liquid delivery
  • Complex materials & hazardous precursors

Precise Control

  • User friendly interface
  • Automatic process control
  • Easy recipe editing and recipe library
  • Intgrated process camera
  • Remote operation via TCP/IP
  • Fully safety interlocked
  • System management tools and reports

Benefits

  • Flexible processing for different applications
  • Fast growth and turnaround times
  • Low cost of ownership
  • Easy Maintenance and cleaning
  • Multiuser account with access control
  • Real time data logging & consumables tracking
  • Extensive growth library and integration experience
  • Large user and install base
Enquiry sent successfully
Product Enquiry